类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 12 V |
电流 - 连续漏极 (id) @ 25°c: | 2.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 61mOhm @ 2.5A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 13 nC @ 4.5 V |
vgs (最大值): | ±10V |
输入电容 (ciss) (max) @ vds: | 1350 pF @ 6 V |
场效应管特征: | - |
功耗(最大值): | 760mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TSMT3 |
包/箱: | SC-96 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRF2903ZRochester Electronics |
MOSFET N-CH 30V 160A TO220AB |
|
TK2A65D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 2A TO220SIS |
|
AOT9N70Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 9A TO220 |
|
BSZ0901NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 25A/40A TSDSON |
|
NTE66NTE Electronics, Inc. |
MOSFET N-CHANNEL 100V 14A TO220 |
|
UPA2719GR-E2-ATRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF3415STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 43A D2PAK |
|
FCP16N60NSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 16A TO220-3 |
|
PMV90ENE215Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
APT5018SFLLG/TRRoving Networks / Microchip Technology |
MOSFET N-CH 500V 27A D3PAK |
|
NTR4501NST1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SOT23 |
|
MTP23P06VGRochester Electronics |
MOSFET P-CH 60V 23A TO220AB |
|
PH8030L,115Rochester Electronics |
MOSFET N-CH 30V 76.7A LFPAK56 |