类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 19A (Ta), 30A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 7mOhm @ 20A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 26 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1225 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 4.2W (Ta), 39W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-DFN (5x6) |
包/箱: | 8-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTE492NTE Electronics, Inc. |
MOSFET N-CHANNEL 200V 250MA TO92 |
|
2SJ166-T1B-ARochester Electronics |
P-CHANNEL MOSFET |
|
CSD17576Q5BTexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
BUK9M5R0-40HXNexperia |
MOSFET N-CH 40V 85A LFPAK33 |
|
SI4435DDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 11.4A 8SO |
|
IPP126N10N3GRochester Electronics |
MOSFET N-CH 100V 58A TO220-3 |
|
IXTN90N25L2Wickmann / Littelfuse |
MOSFET N-CH 250V 90A SOT227B |
|
BUK7107-55ATE,118Rochester Electronics |
MOSFET N-CH 55V 75A D2PAK |
|
MGSF3433VT1Rochester Electronics |
PFET TSOP6S 20V 0.098R TR |
|
CSD19505KCSTexas Instruments |
MOSFET N-CH 80V 150A TO220-3 |
|
SQ2362ES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 4.3A SOT23-3 |
|
STF26N65DM2STMicroelectronics |
MOSFET N-CH 650V 20A TO220FP |
|
STW15NK50ZSTMicroelectronics |
MOSFET N-CH 500V 14A TO247-3 |