English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 900mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1290 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 98W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-251 |
| 包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IAUC120N04S6L008ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 120A 8TDSON-33 |
|
IRF3709ZPBFRochester Electronics |
MOSFET N-CH 30V 87A TO220AB |
|
PMV25ENEARNexperia |
MOSFET N-CH 30V 5.5A TO236AB |
|
DKI06261Sanken Electric Co., Ltd. |
MOSFET N-CH 60V 25A TO252 |
|
IRLR3103TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 55A DPAK |
|
STD19N3LLH6AGSTMicroelectronics |
MOSFET N-CH 30V 10A DPAK |
|
IRFP044NPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRFS3806PBFRochester Electronics |
MOSFET N-CH 60V 43A D2PAK |
|
RM120N60T2Rectron USA |
MOSFET N-CH 60V 120A TO220-3 |
|
SI1302DL-T1-BE3Vishay / Siliconix |
MOSFET N-CH 30V 600MA SC70-3 |
|
IRF250P225IR (Infineon Technologies) |
MOSFET N-CH 250V 69A TO247AC |
|
FDB7030BLRochester Electronics |
60A, 30V, 0.009OHM, N-CHANNEL, |
|
TK10J80E,S1EToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 10A TO3P |
