English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 53A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 20mOhm @ 29A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 61 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.5 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 120W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247AC |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFS3806PBFRochester Electronics |
MOSFET N-CH 60V 43A D2PAK |
|
RM120N60T2Rectron USA |
MOSFET N-CH 60V 120A TO220-3 |
|
SI1302DL-T1-BE3Vishay / Siliconix |
MOSFET N-CH 30V 600MA SC70-3 |
|
IRF250P225IR (Infineon Technologies) |
MOSFET N-CH 250V 69A TO247AC |
|
FDB7030BLRochester Electronics |
60A, 30V, 0.009OHM, N-CHANNEL, |
|
TK10J80E,S1EToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 10A TO3P |
|
SI3424BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8A 6TSOP |
|
AON7421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 30A/50A 8DFN |
|
APT5024SLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 22A D3PAK |
|
NTK3134NT5HRochester Electronics |
MOSFET FIELD EFFECT SOT723 |
|
SQ3427AEEV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
|
FDMS86181Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 44A/124A 8PQFN |
|
DMP2023UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 7.6A 6UDFN |
