MOSFET N-CH 60V 43A D2PAK
INSERT DB9 RCPT COUPLER
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 43A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 15.8mOhm @ 25A, 10V |
vgs(th) (最大值) @ id: | 4V @ 50µA |
栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1.15 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 71W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RM120N60T2Rectron USA |
MOSFET N-CH 60V 120A TO220-3 |
|
SI1302DL-T1-BE3Vishay / Siliconix |
MOSFET N-CH 30V 600MA SC70-3 |
|
IRF250P225IR (Infineon Technologies) |
MOSFET N-CH 250V 69A TO247AC |
|
FDB7030BLRochester Electronics |
60A, 30V, 0.009OHM, N-CHANNEL, |
|
TK10J80E,S1EToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 10A TO3P |
|
SI3424BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 8A 6TSOP |
|
AON7421Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 30A/50A 8DFN |
|
APT5024SLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 22A D3PAK |
|
NTK3134NT5HRochester Electronics |
MOSFET FIELD EFFECT SOT723 |
|
SQ3427AEEV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
|
FDMS86181Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 44A/124A 8PQFN |
|
DMP2023UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 7.6A 6UDFN |
|
NTMFS5C628NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5DFN |