English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4V |
| rds on (max) @ id, vgs: | 123mOhm @ 1A, 4V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 3.4 nC @ 4 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 195 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500mW (Ta) |
| 工作温度: | 150°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | UFM |
| 包/箱: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHG32N50D-E3Vishay / Siliconix |
MOSFET N-CH 500V 30A TO247AC |
|
IRFH7085TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 100A PQFN |
|
STB2N62K3STMicroelectronics |
MOSFET N-CH 620V 2.2A TO263 |
|
FQI13N50CTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 13A I2PAK |
|
SISS10DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK 1212-8S |
|
NTD5N50-001-MORochester Electronics |
NFET DPAK 500V 1.8R |
|
BSZ0902NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 21A/40A TSDSON |
|
IRLZ44NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 47A D2PAK |
|
SI8824EDB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 2.1A MICROFOOT |
|
IXFN50N120SKWickmann / Littelfuse |
SICFET N-CH 1200V 48A SOT227B |
|
TPIC1501ADWRRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPP80N06S-08Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STF4LN80K5STMicroelectronics |
MOSFET N-CH 800V 3A TO220FP |
