English
简体中文
MOSFET N-CH 40V 60A PPAK 1212-8S
IC SRAM 18KBIT PARALLEL 52PLCC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.65mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 75 nC @ 10 V |
| vgs (最大值): | +20V, -16V |
| 输入电容 (ciss) (max) @ vds: | 3750 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 57W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 1212-8S (3.3x3.3) |
| 包/箱: | PowerPAK® 1212-8S |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTD5N50-001-MORochester Electronics |
NFET DPAK 500V 1.8R |
|
BSZ0902NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 21A/40A TSDSON |
|
IRLZ44NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 47A D2PAK |
|
SI8824EDB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 2.1A MICROFOOT |
|
IXFN50N120SKWickmann / Littelfuse |
SICFET N-CH 1200V 48A SOT227B |
|
TPIC1501ADWRRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPP80N06S-08Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STF4LN80K5STMicroelectronics |
MOSFET N-CH 800V 3A TO220FP |
|
FK4B01120L1Panasonic |
MOSFET N-CH 12V 3.9A ULGA004 |
|
NVMFS5C468NLWFT1GRochester Electronics |
MOSFET N-CH 40V 13A/37A 5DFN |
|
NTNS3C94NZT5GRochester Electronics |
69A, 40V, 0.0085OHM, N-CHANNEL M |
|
BSZ065N06LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 40A TSDSON |
|
IPD050N03LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-31 |