类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SPP80N06S-08Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STF4LN80K5STMicroelectronics |
MOSFET N-CH 800V 3A TO220FP |
|
FK4B01120L1Panasonic |
MOSFET N-CH 12V 3.9A ULGA004 |
|
NVMFS5C468NLWFT1GRochester Electronics |
MOSFET N-CH 40V 13A/37A 5DFN |
|
NTNS3C94NZT5GRochester Electronics |
69A, 40V, 0.0085OHM, N-CHANNEL M |
|
BSZ065N06LS5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 40A TSDSON |
|
IPD050N03LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO252-31 |
|
NTD14N03RT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 2.5A DPAK |
|
IRFHM8228TRPBFRochester Electronics |
HEXFET N-CHANNEL , 25V, 19A |
|
IPS075N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 50A TO251-3 |
|
AOW11S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO262 |
|
2SK327700LPanasonic |
MOSFET N-CH 200V 2.5A U-G1 |
|
DMT6005LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHA 60V 17.9A POWERDI |