English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4V |
| rds on (max) @ id, vgs: | 65mOhm @ 1.5A, 4V |
| vgs(th) (最大值) @ id: | 1.2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 2.2 nC @ 4 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 200 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500mW (Ta) |
| 工作温度: | 150°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | UFV |
| 包/箱: | 5-SMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFZ48SPBFVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
|
FDB603ALRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPA60R360P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO220 |
|
ISL9N312AD3STNLRochester Electronics |
MOSFET N-CH 30V 50A TO252AA |
|
IPU50R2K0CEBKMA1Rochester Electronics |
MOSFET N-CH 500V 2.4A TO251-3 |
|
AOTF600A70LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 700V 8.5A TO220F |
|
YJL2305B-F2-0000HF |
P-CH MOSFET 20V 5.4A SOT-23-3L |
|
IRFR1N60APBF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
PMN27UP,115-NXPRochester Electronics |
MOSFET P-CH 20V 5.7A 6TSOP |
|
IXTH140P05TWickmann / Littelfuse |
MOSFET P-CH 50V 140A TO247 |
|
NVMS10P02R2GRochester Electronics |
MOSFET P-CH 20V 10A 8SOIC |
|
STL35N75LF3STMicroelectronics |
MOSFET N-CH 75V 32A POWERFLAT |
|
IRF720PBF-BE3Vishay / Siliconix |
MOSFET N-CH 400V 3.3A TO220AB |
