类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 75 V |
电流 - 连续漏极 (id) @ 25°c: | 32A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 25mOhm @ 4A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 7.5 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 800 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 50W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerFlat™ (3.3x3.3) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF720PBF-BE3Vishay / Siliconix |
MOSFET N-CH 400V 3.3A TO220AB |
|
IPP086N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO220-3 |
|
RJK0651DPB-00#J5Renesas Electronics America |
MOSFET N-CH 60V 25A LFPAK |
|
IRFS4115TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 150V 105A D2PAK |
|
TP90H050WSTransphorm |
GANFET N-CH 900V 34A TO247-3 |
|
RQ3E120BNTBROHM Semiconductor |
MOSFET N-CH 30V 12A 8HSMT |
|
IXFH120N25TWickmann / Littelfuse |
MOSFET N-CH 250V 120A TO247AD |
|
G2R1000MT33JGeneSiC Semiconductor |
SIC MOSFET N-CH 4A TO263-7 |
|
HUFA76429D3SRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
SI7454DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 5A PPAK SO-8 |
|
STP40NF20STMicroelectronics |
MOSFET N-CH 200V 40A TO220AB |
|
SFT1350-TL-HRochester Electronics |
MOSFET P-CH 40V 19A TP-FA |
|
FDS4080N7Rochester Electronics |
MOSFET N-CH 40V 13A 8SO |