类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 700mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 250mOhm @ 400mA, 10V |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 160 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 500mW (Ta) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STL38N65M5STMicroelectronics |
MOSFET N-CH 650V PWRFLAT HV |
|
FQD5N20LTFRochester Electronics |
MOSFET N-CH 200V 3.8A DPAK |
|
FQI5N15TURochester Electronics |
MOSFET N-CH 150V 5.4A I2PAK |
|
GKI07301Sanken Electric Co., Ltd. |
MOSFET N-CH 75V 6A 8DFN |
|
SI2367DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.8A SOT23-3 |
|
STL42N65M5STMicroelectronics |
MOSFET N-CH 650V 4A PWRFLAT HV |
|
SUG80050E-GE3Vishay / Siliconix |
MOSFET N-CH 150V 100A TO247AC |
|
NTP22N06LRochester Electronics |
MOSFET N-CH 60V 22A TO220AB |
|
IMW65R027M1HXKSA1IR (Infineon Technologies) |
MOSFET 650V NCH SIC TRENCH |
|
IRFS3004TRL7PPIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
|
SQJ431EP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 200V 12A PPAK SO-8 |
|
NTHL080N120SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 1200V 44A TO247-3 |
|
TK40A06N1,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 40A TO220SIS |