English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | C3M™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 900 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 15V |
| rds on (max) @ id, vgs: | 155mOhm @ 15A, 15V |
| vgs(th) (最大值) @ id: | 3.5V @ 3mA |
| 栅极电荷 (qg) (max) @ vgs: | 17.3 nC @ 15 V |
| vgs (最大值): | +18V, -8V |
| 输入电容 (ciss) (max) @ vds: | 350 pF @ 600 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 83W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK-7 |
| 包/箱: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFU1010ZPBFRochester Electronics |
MOSFET N-CH 55V 42A IPAK |
|
NTE2398NTE Electronics, Inc. |
MOSFET N-CHANNEL 500V 4.5A TO220 |
|
IPB60R280P6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13.8A D2PAK |
|
HUF76645S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
AUIRL3705ZRochester Electronics |
MOSFET N-CH 55V 75A TO220AB |
|
IRFP17N50LPBFVishay / Siliconix |
MOSFET N-CH 500V 16A TO247-3 |
|
IRF840APBFVishay / Siliconix |
MOSFET N-CH 500V 8A TO220AB |
|
ZVN3310AZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 200MA TO92-3 |
|
IXTH50N20Wickmann / Littelfuse |
MOSFET N-CH 200V 50A TO247 |
|
STP400N4F6STMicroelectronics |
MOSFET N-CH 40V 120A TO220 |
|
NVD5802NT4GRochester Electronics |
16.4A, 40V, 0.0078OHM, N-CHANNE |
|
IRFD9024PBFVishay / Siliconix |
MOSFET P-CH 60V 1.6A 4DIP |
|
STW34NM60NDSTMicroelectronics |
MOSFET N-CH 600V 29A TO247 |
