CIR BRKR THRM 2A 240VAC 60VDC
MOSFET N-CH 40V 120A TO220
RES 29.4K OHM 0.05% 1/8W 1206
类型 | 描述 |
---|---|
系列: | DeepGATE™, STripFET™ VI |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.7mOhm @ 60A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 377 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 20000 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVD5802NT4GRochester Electronics |
16.4A, 40V, 0.0078OHM, N-CHANNE |
|
IRFD9024PBFVishay / Siliconix |
MOSFET P-CH 60V 1.6A 4DIP |
|
STW34NM60NDSTMicroelectronics |
MOSFET N-CH 600V 29A TO247 |
|
IRFR210PBFVishay / Siliconix |
MOSFET N-CH 200V 2.6A DPAK |
|
IRF9Z24STRLPBFVishay / Siliconix |
MOSFET P-CH 60V 11A D2PAK |
|
ZVN4310GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 1.67A SOT223 |
|
MCH3382-TL-WRochester Electronics |
MOSFET P-CH 12V 2A SC70FL/MCPH3 |
|
FCH150N65F-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 24A TO247 |
|
FDW262PRochester Electronics |
MOSFET P-CH 20V 4.5A 8TSSOP |
|
TSM110NB04CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 40V 12A/54A 8PDFN |
|
XPH4R714MC,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 60A 8SOP |
|
FDS8672SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
|
FQI12N60TURochester Electronics |
MOSFET N-CH 600V 10.5A I2PAK |