类型 | 描述 |
---|---|
系列: | EPAD® |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | 4 N-Channel, Matched Pair |
场效应管特征: | Standard |
漏源电压 (vdss): | 10.6V |
电流 - 连续漏极 (id) @ 25°c: | 12mA, 3mA |
rds on (max) @ id, vgs: | 500Ohm @ 4.8V |
vgs(th) (最大值) @ id: | 810mV @ 1µA |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | 2.5pF @ 5V |
功率 - 最大值: | 500mW |
工作温度: | 0°C ~ 70°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF7304IR (Infineon Technologies) |
MOSFET 2P-CH 20V 4.3A 8-SOIC |
|
STL15DN4F5STMicroelectronics |
MOSFET 2N-CH 40V 60A POWERFLAT |
|
NTJD4401NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 630MA SOT363 |
|
MSCSM70TAM10CTPAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6P |
|
SIZF906ADT-T1-GE3Vishay / Siliconix |
MOSFET DUAL N-CHAN 30V |
|
IRL6372TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 8.1A 8SOIC |
|
SI7923DN-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 30V 4.3A 1212-8 |
|
FDMS9600SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/16A POWER56 |
|
NVMFD5C470NT1GSanyo Semiconductor/ON Semiconductor |
40V 11.7 MOHM T8 S08FL DU |
|
DMN2004DWKQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2NCH 20V 540MA SOT363 |
|
SSM6N36TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
|
SQJ260EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
SLA5065 LF830Sanken Electric Co., Ltd. |
MOSFET 4N-CH 60V 7A 15-SIP |