English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, ZBT |
| 内存大小: | 9Mb (256K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 2V, 2.3V ~ 2.7V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (20x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS61LPS25636A-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71V67603S133BGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
25LC160A-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8DIP |
|
24LC64T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
SST26VF064B-104V/SMRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8SOIJ |
|
24AA014T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-6 |
|
CY14B108L-BA45XICypress Semiconductor |
IC NVSRAM 8MBIT PARALLEL 48FBGA |
|
S25FL256LDPBHN020Rochester Electronics |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
71256SA15PZGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
70T631S15BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
MT40A256M16LY-062E AUT:FMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
CYD18S18V18-200BBAXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 256FBGA |
|
71V124SA10YGRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
