类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24LC64T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIJ |
|
SST26VF064B-104V/SMRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 8SOIJ |
|
24AA014T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-6 |
|
CY14B108L-BA45XICypress Semiconductor |
IC NVSRAM 8MBIT PARALLEL 48FBGA |
|
S25FL256LDPBHN020Rochester Electronics |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
71256SA15PZGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
70T631S15BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
MT40A256M16LY-062E AUT:FMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
CYD18S18V18-200BBAXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 256FBGA |
|
71V124SA10YGRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
S29GL512S11DHI023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
MX30UF2GE8AB-XKIMacronix |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
CY7C131E-25JXCFlip Electronics |
IC SRAM 8KBIT PARALLEL 52PLCC |