类型 | 描述 |
---|---|
系列: | XTRA V |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (TLC) |
内存大小: | 256Gb (32G x 8) |
内存接口: | eMMC |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -25°C ~ 85°C |
安装类型: | Surface Mount |
包/箱: | 153-VFBGA |
供应商设备包: | 153-FBGA (11.5x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71024S20YG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
BR93G66FVT-3AGE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI 3MHZ 8TSSOPB |
|
AM27S191SA/B3ARochester Electronics |
AM27S191 - OTP ROM, 2KX8, 30NS |
|
25LC640AT-M/SNRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 10MHZ 8SOIC |
|
CY7S1041G-10ZSXIRochester Electronics |
STANDARD SRAM, 256KX16, 10NS, CM |
|
MT25QL128ABA1ESE-0SITMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 8SO |
|
93LC66CXT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8SOIC |
|
IS64WV10248BLL-10CTLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
IS62LV256AL-20TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PAR 28TSOP I |
|
CY7C1470BV33-200BZXICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY62136FV30LL-55ZSXETCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
7164L25YGIRochester Electronics |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
AS7C4098A-15JINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44SOJ |