类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 2Gb (256M x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-VFBGA |
供应商设备包: | 78-VFBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62148DV30LL-70SXIRochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
S25FL512SDSBHV213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
71V256SA12YRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
71256SA25TPGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28DIP |
|
CY7C028-15AIFlip Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
S25FL128SAGMFV013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
MT25QU01GBBB8ESF-0SIT TRMicron Technology |
IC FLASH 1GBIT SPI 166MHZ 16SO |
|
CY14B116N-ZSP25XITCypress Semiconductor |
IC NVSRAM 16MBIT PAR 54TSOP II |
|
25C160-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
70V631S12PRFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
CYD02S36V-133BBCRochester Electronics |
DUAL-PORT SRAM, 64KX36 |
|
S29VS064RABBHI010Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 44FBGA |
|
24VL024T/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |