类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (8x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V256SA12YRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
71256SA25TPGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28DIP |
|
CY7C028-15AIFlip Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
S25FL128SAGMFV013Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
MT25QU01GBBB8ESF-0SIT TRMicron Technology |
IC FLASH 1GBIT SPI 166MHZ 16SO |
|
CY14B116N-ZSP25XITCypress Semiconductor |
IC NVSRAM 16MBIT PAR 54TSOP II |
|
25C160-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
70V631S12PRFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
CYD02S36V-133BBCRochester Electronics |
DUAL-PORT SRAM, 64KX36 |
|
S29VS064RABBHI010Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 44FBGA |
|
24VL024T/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
IS25WP128-RMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI 16SOIC |
|
S25FS256SAGBHI203Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |