English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3L |
| 内存大小: | 2Gb (256M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-VFBGA |
| 供应商设备包: | 78-FBGA (7.5x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70T3599S133BFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 133MHZ |
|
|
S72VS256RE0AHBH13Cypress Semiconductor |
IC FLASH RAM 256MBIT PAR 133FBGA |
|
|
MT52L1G32D4PG-093 WT:BMicron Technology |
IC DRAM 32GBIT 1067MHZ 178FBGA |
|
|
MT53D768M32D2DS-046 WT:A TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
28C64AX-15B/UCRochester Electronics |
DUAL MARKED (5962-8751422YC) |
|
|
CY100E422L-5DCQRochester Electronics |
STANDARD SRAM, 256X4, ECL100K |
|
|
IS43DR16128C-25DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
|
MT53E128M16D1FW-046 AIT:A TRMicron Technology |
IC DRAM LPDDR4 2G FBGA |
|
|
R1WV6416RSD-7SI#B0Rochester Electronics |
STANDARD SRAM, 4MX16, 70NS |
|
|
HN58C257AT85SRERochester Electronics |
256K EEPROM (32KWORD X 8-BIT) |
|
|
71V25761S183PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
|
MT29F512G08EBHAFJ4-3R:AMicron Technology |
IC FLSH 512GBIT PARALLEL 132VBGA |
|
|
HN58C256AFPI85ERochester Electronics |
256K EEPROM (32KWORD X 8-BIT) |
