类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR3 |
内存大小: | 32Gb (1G x 32) |
内存接口: | - |
时钟频率: | 1067 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.2V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 178-VFBGA |
供应商设备包: | 178-FBGA (12x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT53D768M32D2DS-046 WT:A TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
![]() |
28C64AX-15B/UCRochester Electronics |
DUAL MARKED (5962-8751422YC) |
![]() |
CY100E422L-5DCQRochester Electronics |
STANDARD SRAM, 256X4, ECL100K |
![]() |
IS43DR16128C-25DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
![]() |
MT53E128M16D1FW-046 AIT:A TRMicron Technology |
IC DRAM LPDDR4 2G FBGA |
![]() |
R1WV6416RSD-7SI#B0Rochester Electronics |
STANDARD SRAM, 4MX16, 70NS |
![]() |
HN58C257AT85SRERochester Electronics |
256K EEPROM (32KWORD X 8-BIT) |
![]() |
71V25761S183PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
![]() |
MT29F512G08EBHAFJ4-3R:AMicron Technology |
IC FLSH 512GBIT PARALLEL 132VBGA |
![]() |
HN58C256AFPI85ERochester Electronics |
256K EEPROM (32KWORD X 8-BIT) |
![]() |
MT29F1T08EEHBFJ4-T:BMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
![]() |
MT29F4G08ABBFAH4-IT:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
![]() |
S99-50312Rochester Electronics |
S99-50312 |