类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 100V |
电压 - 击穿(分钟): | 111V |
电压 - 钳位(最大值)@ ipp: | 162V |
电流 - 峰值脉冲 (10/1000µs): | 3.7A |
功率-峰值脉冲: | 600W |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AA, SMB |
供应商设备包: | SMB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M5KP15AE3Roving Networks / Microchip Technology |
TVS DIODE 15V 24.4V DO204AR |
|
SMBJ5.0A-QHJ.W. Miller / Bourns |
TVS DIODE AECQ |
|
P4KE16CA R0GTSC (Taiwan Semiconductor) |
TVS DIODE 13.6V 22.5V DO204AL |
|
MPLAD30KP78AE3Roving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
|
TPSMC10AHE3_B/IVishay General Semiconductor – Diodes Division |
TVS DIODE 8.55V 14.5V DO214AB |
|
JANTXV1N6132AUSRoving Networks / Microchip Technology |
TVS DIODE 91.2V 165.1V B SQ-MELF |
|
SMBG6.5AHE3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 6.5V 11.2V DO215AA |
|
SM15T30A-M3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 25.6V 41.5V DO214AB |
|
10BJ160APowerStor (Eaton) |
TVS DIODE 160V 259VC 1KW DO214AA |
|
P6SMB68AHM4GTSC (Taiwan Semiconductor) |
TVS DIODE 58.1V 92V DO214AA |
|
SA6.0CA-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 6V 10.3V DO204AC |
|
BZW04-6V4B-E3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 6.4V 11.3V DO204AL |
|
MXL5KP60ARoving Networks / Microchip Technology |
TVS DIODE 60V 96.8V CASE 5A |