







FUSE HLDR BLADE 32V 60A IN LINE
TVS DIODE 22V 35.5V DO214AA
TRANSISTOR, NPN, 25V, 0.8A, 160A
CONN D-SUB PLUG 43POS SLDR CUP
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔(典型值): | 22V |
| 电压 - 击穿(分钟): | 24.4V |
| 电压 - 钳位(最大值)@ ipp: | 35.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 16.9A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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MSMBG7.0ARoving Networks / Microchip Technology |
TVS DIODE 7V 12V DO215AA |
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MXL5KP45CARoving Networks / Microchip Technology |
TVS DIODE 45V 72.7V CASE 5A |
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NUP3105LT1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 32V 66V SOT23-3 |
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MSMBJ36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V DO214AA |
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SMBJ160CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 160V 259V DO214AA |
|
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GSOT04-G3-08Vishay General Semiconductor – Diodes Division |
TVS DIODE 4V 14.3V SOT23 |
|
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MXLSMBG6.0ARoving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AA |
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MASMBG11CAE3Roving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AA |
|
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5KP210AWickmann / Littelfuse |
TVS DIODE 210V 349.5V P600 |
|
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SMCJ6.0CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 6V 10.3V DO214AB |
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TMPG06-20AHE3_A/DVishay General Semiconductor – Diodes Division |
TVS DIODE 17V 27.7V MPG06 |
|
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MXSMBG110AE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AA |
|
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P6KE20ARLRochester Electronics |
TRANS VOLTAGE SUPPRESSOR DIODE |