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| 类型 | 描述 |
|---|---|
| 系列: | SMDJ-HRA |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 40V |
| 电压 - 击穿（分钟）: | 44.4V |
| 电压 - 钳位（最大值）@ ipp: | 64.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 46.5A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AB, SMC |
| 供应商设备包: | DO-214AB (SMCJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
P4KE150CA R0GTSC (Taiwan Semiconductor) |
TVS DIODE 128V 207V DO204AL |
|
P6SMAJ51ADF-13Zetex Semiconductors (Diodes Inc.) |
TVS DIODE 51V 82.4V DFLAT |
|
ATV04A141JB-HFComchip Technology |
TVS DIODE 140V 226.8V SMA |
|
P4KE220CAHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 185V 328V DO204AL |
|
MXLSMBJ12AE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V DO214AA |
|
P6SMB10A-E3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 8.55V 14.5V DO214AA |
|
MSMBJ90CARoving Networks / Microchip Technology |
TVS DIODE 90V 146V DO214AA |
|
SMBJ120D-M3/IVishay General Semiconductor – Diodes Division |
TVS DIODE 120V 190V DO214AA |
|
SMF45A-E3-18Vishay General Semiconductor – Diodes Division |
TVS DIODE 45V 72.7V DO219AB |
|
SMCG9.0AHE3/57TVishay General Semiconductor – Diodes Division |
TVS DIODE 9V 15.4V DO215AB |
|
MXLSMBG9.0CARoving Networks / Microchip Technology |
TVS DIODE 9V 15.4V DO215AA |
|
P4SMA75CA-E3/61Vishay General Semiconductor – Diodes Division |
TVS DIODE 64.1V 104V DO214AC |
|
SMCJ7.5CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 7.5V 14.3V DO214AB |
