类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 7.78V |
电压 - 击穿(分钟): | 8.65V |
电压 - 钳位(最大值)@ ipp: | 13.4V |
电流 - 峰值脉冲 (10/1000µs): | 30A |
功率-峰值脉冲: | 400W |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SMBG28AHE3/52Vishay General Semiconductor – Diodes Division |
TVS DIODE 28V 45.4V DO215AA |
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MPLAD6.5KP40CARoving Networks / Microchip Technology |
TVS DIODE 40V 64.5V PLAD |
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UPT8R/TR13Roving Networks / Microchip Technology |
TVS DIODE 8V 13.7V POWERMITE 1 |
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MSMBJ8.0ARoving Networks / Microchip Technology |
TVS DIODE 8V 13.6V DO214AA |
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SMLJ26A-QJ.W. Miller / Bourns |
TVS DIODE 26V 42.1V SMC |
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SMC5K60A-M3/HVishay General Semiconductor – Diodes Division |
TVS DIODE 60V 96.8V DO214AB |
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SMA6J26A-TRSTMicroelectronics |
TVS DIODE 26V 47.9V SMA |
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MSMBJ54CAE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V DO214AA |
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5KP30AHE3/54Vishay General Semiconductor – Diodes Division |
TVS DIODE 30V 48.4V P600 |
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TV15C100JB-HFComchip Technology |
TVS DIODE 10V 17V DO214AB |
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P6SMB100CWickmann / Littelfuse |
TVS DIODE 85.5V 143.85V DO214AA |
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MX5KP12CAE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V CASE 5A |
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5.0SMDJ54AWickmann / Littelfuse |
TVS DIODE 54V 87.1V DO214AB |