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| 类型 | 描述 |
|---|---|
| 系列: | P4KE |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 23.1V |
| 电压 - 击穿（分钟）: | 25.7V |
| 电压 - 钳位（最大值）@ ipp: | 37.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 11A |
| 功率-峰值脉冲: | 400W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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ESD PROTECTION ARRAY |
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SMBG64CA-M3/5BVishay General Semiconductor – Diodes Division |
TVS DIODE 64V 103V DO215AA |
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1.5SMC11CA-E3/9ATVishay General Semiconductor – Diodes Division |
TVS DIODE 9.4V 15.6V DO214AB |
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MX5KP17AE3Roving Networks / Microchip Technology |
TVS DIODE 17V 27.6V CASE 5A |
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5.0SMDJ7.5AJ.W. Miller / Bourns |
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MXL5KP51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V CASE 5A |
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5.0SMDJ90AHM6GTSC (Taiwan Semiconductor) |
TVS DIODE 90V 146V DO214AB |
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MRT100KP100CAE3Roving Networks / Microchip Technology |
TVS DIODE 100V 197V CASE 5A |
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DF2B29FU,H3FToshiba Electronic Devices and Storage Corporation |
TVS DIODE 24V 47V USC |
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1N6278AHE3_A/DVishay General Semiconductor – Diodes Division |
TVS DIODE 17.1V 27.7V 1.5KE |
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SA75AHE3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 75V 121V DO204AC |
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SA85A-E3/73Vishay General Semiconductor – Diodes Division |
TVS DIODE 85V 137V DO204AC |
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PESD3V3T1BLYLNexperia |
TVS DIODE 3.3V 11V DFN1006-2 |
