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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 90V |
| 电压 - 击穿（分钟）: | 94.77V |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | 30000W (30kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | P600, Axial |
| 供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MAP6KE10CAE3Roving Networks / Microchip Technology |
TVS DIODE 8.55V 14.5V T-18 |
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MXPLAD36KP400ARoving Networks / Microchip Technology |
TVS DIODE 400V 644V PLAD |
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MXPLAD36KP18CARoving Networks / Microchip Technology |
TVS DIODE 18V 30.8V PLAD |
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MXSMLG100CAE3Roving Networks / Microchip Technology |
TVS DIODE 100V 162V DO215AB |
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SMAJ180A-QJ.W. Miller / Bourns |
DIO TVS VWM 180V 400W UNIDIR SMA |
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SMCG6042A/TR13Microsemi |
TVS DIODE 11V 18.2V DO215AB |
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MAPLAD18KP110ARoving Networks / Microchip Technology |
TVS DIODE 110V 177V PLAD |
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JTXV1N6120ASemtech |
T MET BI 500W 39V |
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MPLAD18KP33CAE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V PLAD |
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MAPLAD30KP51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
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MASMCGLCE17ARoving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO215AB |
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CD214C-T36ALFJ.W. Miller / Bourns |
TVS DIODE 36V 58.1V SMC |
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SMA6J26CA-QJ.W. Miller / Bourns |
TVS DIODE |
