English
简体中文
TVS DIODE 18V 30.8V PLAD
RF ANT 1.575GHZ/1.602GHZ MODULE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 18V |
| 电压 - 击穿（分钟）: | 20V |
| 电压 - 钳位（最大值）@ ipp: | 30.8V |
| 电流 - 峰值脉冲 (10/1000µs): | 1169A (1.169kA) |
| 功率-峰值脉冲: | 36000W (36kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Nonstandard SMD |
| 供应商设备包: | PLAD |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MXSMLG100CAE3Roving Networks / Microchip Technology |
TVS DIODE 100V 162V DO215AB |
|
|
SMAJ180A-QJ.W. Miller / Bourns |
DIO TVS VWM 180V 400W UNIDIR SMA |
|
|
SMCG6042A/TR13Microsemi |
TVS DIODE 11V 18.2V DO215AB |
|
|
MAPLAD18KP110ARoving Networks / Microchip Technology |
TVS DIODE 110V 177V PLAD |
|
|
JTXV1N6120ASemtech |
T MET BI 500W 39V |
|
|
MPLAD18KP33CAE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V PLAD |
|
|
MAPLAD30KP51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
|
|
MASMCGLCE17ARoving Networks / Microchip Technology |
TVS DIODE 17V 27.6V DO215AB |
|
|
CD214C-T36ALFJ.W. Miller / Bourns |
TVS DIODE 36V 58.1V SMC |
|
|
SMA6J26CA-QJ.W. Miller / Bourns |
TVS DIODE |
|
|
15KPA58CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 58V 93.8V P600 |
|
|
MXPLAD18KP100ARoving Networks / Microchip Technology |
TVS DIODE 100V 162V PLAD |
|
|
1N6058Roving Networks / Microchip Technology |
TVS DIODE 48V 89V DO13 |