类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 48V |
电压 - 击穿(分钟): | 55.8V |
电压 - 钳位(最大值)@ ipp: | 89V |
电流 - 峰值脉冲 (10/1000µs): | 16.9A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-13 |
供应商设备包: | DO-13 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MPLAD7.5KP15CAE3Roving Networks / Microchip Technology |
TVS DIODE |
|
1.5SMC480AHM3_B/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1.5KW 480V DO214AB |
|
MSMCGLCE26AE3Roving Networks / Microchip Technology |
TVS DIODE 26V 42.1V DO215AB |
|
MXLPLAD30KP16ARoving Networks / Microchip Technology |
TVS DIODE 16V 27.2V PLAD |
|
MSMCJ54CA/TRRoving Networks / Microchip Technology |
TVS |
|
1N6051Roving Networks / Microchip Technology |
TVS DIODE 26V 47.7V DO13 |
|
MXLSMLG18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V DO215AB |
|
MXP6KE56CAE3Roving Networks / Microchip Technology |
TVS DIODE 47.8V 77V T-18 |
|
5KP170CA-BWickmann / Littelfuse |
TVS DIODE 170V 275V P600 |
|
MXSMCG58CAE3Roving Networks / Microchip Technology |
TVS DIODE 58V 93.6V DO215AB |
|
MAPLAD36KP100CAE3Roving Networks / Microchip Technology |
TVS DIODE 100V 162V PLAD |
|
M1.5KE350AE3Roving Networks / Microchip Technology |
TVS DIODE 300V 482V CASE-1 |
|
SMBG110A-E3/52Vishay General Semiconductor – Diodes Division |
600W 110V 5% UNIDIR SMB TVS |