类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 36.8V |
电压 - 击穿(分钟): | 40.9V |
电压 - 钳位(最大值)@ ipp: | 59.3V |
电流 - 峰值脉冲 (10/1000µs): | 10.1A |
功率-峰值脉冲: | 600W |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | T-18, Axial |
供应商设备包: | T-18 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MPLAD18KP22CARoving Networks / Microchip Technology |
TVS DIODE 22V 35.5V PLAD |
|
P4SMA11CA-QJ.W. Miller / Bourns |
DIO TVS VBR 11V 400W BIDIR SMA A |
|
MXPLAD15KP36ARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
|
MSMCJ60A/TRRoving Networks / Microchip Technology |
TVS |
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SMAJ200CA-QJ.W. Miller / Bourns |
DIO TVS VWM 200V 400W BIDIR SMA |
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MSMLG33CARoving Networks / Microchip Technology |
TVS DIODE 33V 53.3V DO215AB |
|
MAPLAD36KP51CARoving Networks / Microchip Technology |
TVS DIODE 51V 82.4V PLAD |
|
MV1N8151USRoving Networks / Microchip Technology |
TVS DIODE |
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MAPLAD30KP58ARoving Networks / Microchip Technology |
TVS DIODE 58V 93.6V PLAD |
|
MXPLAD18KP30AE3Roving Networks / Microchip Technology |
TVS DIODE 30V 48.4V PLAD |
|
JTXV1N6104AUSSemtech |
T MET BI 500W 8V SM |
|
MAP6KE36AE3Roving Networks / Microchip Technology |
TVS DIODE 30.8V 49.9V T-18 |
|
JANTXV1N6469USRoving Networks / Microchip Technology |
TVS DIODE 5V 9V GMELF |