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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 5.8V |
| 电压 - 击穿（分钟）: | 6.45V |
| 电压 - 钳位（最大值）@ ipp: | 10.5V |
| 电流 - 峰值脉冲 (10/1000µs): | 143A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-13 |
| 供应商设备包: | DO-13 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MPLAD7.5KP43CAE3/TRRoving Networks / Microchip Technology |
TVS |
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MAPLAD7.5KP18ARoving Networks / Microchip Technology |
TVS DIODE |
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15KPA26CA-HRAWickmann / Littelfuse |
TVS DIODE 26V 44V P600 |
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MXLPLAD18KP7.5CAE3Roving Networks / Microchip Technology |
TVS DIODE 75V 121V PLAD |
|
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SMCJ110A-QJ.W. Miller / Bourns |
DIO TVS VRWM 110V 1500W UNIDIR S |
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1.5CE22A BK PBFREECentral Semiconductor |
TVS DIODE 18.8V 30.6V DO201 |
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JTXV1N6106ASemtech |
T MET BI 500W 10V |
|
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JAN1N6173USRoving Networks / Microchip Technology |
TVS DIODE 152V 286.65V C SQ-MELF |
|
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SM6F12AYSTMicroelectronics |
DFD PROTECTION & FILTER |
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JANTX1N5652ARoving Networks / Microchip Technology |
TVS DIODE 53V 85V DO13 |
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JAN1N6167Roving Networks / Microchip Technology |
TVS DIODE 86.6V 158.87V C AXIAL |
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|
MXSMLG130CAE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
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MPLAD18KP20ARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V PLAD |
