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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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AOZ8131DI-06Alpha and Omega Semiconductor, Inc. |
TVS DIODE 1CH LOW CAP DFN |
|
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1.5CE9.1CA BK PBFREECentral Semiconductor |
TVS DIODE 7.78V 13.4V DO201 |
|
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SM8S26A-QJ.W. Miller / Bourns |
DIO TVS VWM 26V 6K6W UNIDIR SM8S |
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MQ1N8155USRoving Networks / Microchip Technology |
TVS DIODE |
|
|
JAN1N6105Roving Networks / Microchip Technology |
TVS DIODE 6.9V 14.07V AXIAL |
|
|
MXLPLAD6.5KP10CAE3Roving Networks / Microchip Technology |
TVS DIODE 10V 17V PLAD |
|
|
JAN1N6103USRoving Networks / Microchip Technology |
TVS DIODE 5.7V 11.76V B SQ-MELF |
|
|
SMAJ40CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 40V 71.4V DO214AC |
|
|
MX1N8177USRoving Networks / Microchip Technology |
TVS DIODE |
|
|
MPLAD30KP100CA/TRRoving Networks / Microchip Technology |
TVS |
|
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MXSMCG20AE3Roving Networks / Microchip Technology |
TVS DIODE 20V 32.4V DO215AB |
|
|
CD214L-T8.5CALFJ.W. Miller / Bourns |
TVS DIODE 8.5V 14.4V SMC |
|
|
30KPA96CAE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 96V 156V P600 |
