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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 28V |
| 电压 - 击穿（分钟）: | 31.1V |
| 电压 - 钳位（最大值）@ ipp: | 45.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 66A |
| 功率-峰值脉冲: | 3000W (3kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-215AB, SMC Gull Wing |
| 供应商设备包: | SMLG (DO-215AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXL1.5KE56AE3Roving Networks / Microchip Technology |
TVS DIODE 47.8V 77V CASE-1 |
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1N6117ARoving Networks / Microchip Technology |
TVS DIODE 22.8V 41.6V AXIAL |
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MASMLG15CARoving Networks / Microchip Technology |
TVS DIODE 15V 24.4V DO215AB |
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MSMLG64ARoving Networks / Microchip Technology |
TVS DIODE 64V 103V DO215AB |
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MAP6KE180CARoving Networks / Microchip Technology |
TVS DIODE 154V 246V T-18 |
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SMA6J8.5A-QJ.W. Miller / Bourns |
TVS DIODE |
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MXPLAD36KP54AE3Roving Networks / Microchip Technology |
TVS DIODE 54V 87.1V PLAD |
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JAN1N6130USRoving Networks / Microchip Technology |
TVS DIODE 76V 144.48V B SQ-MELF |
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JTXV1N6145ASemtech |
T MET BI 1500W 9.9V HRV |
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MXSMLG14ARoving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO215AB |
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MPLAD18KP70CAE3Roving Networks / Microchip Technology |
TVS DIODE 70V 113V PLAD |
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SMCJ26CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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|
MLCE54ARoving Networks / Microchip Technology |
TVS DIODE 54V 87.1V CASE-1 |
