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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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1.5SMC200AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
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1.5CE13A BK PBFREECentral Semiconductor |
TVS DIODE 11.1V 18.2V DO201 |
|
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MPLAD36KP64CAE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V PLAD |
|
|
MAPLAD30KP16AE3Roving Networks / Microchip Technology |
TVS DIODE 16V 27.2V PLAD |
|
|
ICT-12Roving Networks / Microchip Technology |
TVS DIODE 12V 16.5V DO13 |
|
|
MXLSMCG90AE3Roving Networks / Microchip Technology |
TVS DIODE 90V 146V DO215AB |
|
|
SMCJ8.0A-HFComchip Technology |
DIODE TVS 8V 1500W SMC UNI-DIR |
|
|
MASMCG6.0AE3Roving Networks / Microchip Technology |
TVS DIODE 6V 10.3V DO215AB |
|
|
5KP36E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 36V 64.3V P600 |
|
|
ESDL4151MX4T5GSanyo Semiconductor/ON Semiconductor |
DIODE ESD PROTECTION X3DFN2 |
|
|
MXLPLAD30KP22ARoving Networks / Microchip Technology |
TVS DIODE 22V 36.4V PLAD |
|
|
SMCJ60CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MPLAD18KP64CAE3Roving Networks / Microchip Technology |
TVS DIODE 64V 103V PLAD |
