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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXLSMCG130AE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
|
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MXLSMCG160AE3Roving Networks / Microchip Technology |
TVS DIODE 160V 259V DO215AB |
|
|
JAN1N6125AUSRoving Networks / Microchip Technology |
TVS DIODE 47.1V 85.3V B SQ-MELF |
|
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MXP6KE39ARoving Networks / Microchip Technology |
TVS DIODE 33.3V 53.9V T-18 |
|
|
MXPLAD6.5KP13CAE3Roving Networks / Microchip Technology |
TVS DIODE 13V 21.5V PLAD |
|
|
SMCJ28AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MQ1N8173Roving Networks / Microchip Technology |
TVS DIODE |
|
|
30KPA70AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 70V 109V P600 |
|
|
MV1N8154Roving Networks / Microchip Technology |
TVS DIODE |
|
|
JTXV1N6107Semtech |
T MET BI 500W 11V |
|
|
MXSMCG33CAE3Roving Networks / Microchip Technology |
TVS DIODE 33V 53.3V DO215AB |
|
|
MAP6KE130AE3Roving Networks / Microchip Technology |
TVS DIODE 111V 179V T-18 |
|
|
SMCG6042E3/TR13Microsemi |
TVS DIODE 10V 19V DO215AB |
