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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 15 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 24V |
| 电压 - 击穿（分钟）: | 26.7V |
| 电压 - 钳位（最大值）@ ipp: | 38.3V |
| 电流 - 峰值脉冲 (10/1000µs): | 1A (8/20µs) |
| 功率-峰值脉冲: | 500W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | 275pF @ 1MHz |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 16-DIP |
| 供应商设备包: | 16-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MASMCG14AE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V DO215AB |
|
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MX1.5KE10ARoving Networks / Microchip Technology |
TVS DIODE 8.55V 14.5V CASE-1 |
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MXSMCG8.0AE3Roving Networks / Microchip Technology |
TVS DIODE 8V 13.6V DO215AB |
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SMCJ150AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
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|
MAPLAD6.5KP28CARoving Networks / Microchip Technology |
TVS DIODE 28V 45.5V MINI-PLAD |
|
|
5KP6.5E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 6.5V 12.3V P600 |
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MPLAD36KP90CAE3Roving Networks / Microchip Technology |
TVS DIODE 90V 146V PLAD |
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SMCJ150CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
1.5SMC30AHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
|
SMCG6054E3/TR13Microsemi |
TVS DIODE 34V 61.9V DO215AB |
|
|
SMCJ17CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MXLPLAD18KP120CARoving Networks / Microchip Technology |
TVS DIODE 120V 193V PLAD |
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|
MXUPTB10E3Roving Networks / Microchip Technology |
TVS DIODE |
