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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 8.5V |
| 电压 - 击穿（分钟）: | 9.44V |
| 电压 - 钳位（最大值）@ ipp: | 14.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 100A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | 100pF @ 1MHz |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-215AB, SMC Gull Wing |
| 供应商设备包: | SMCG (DO-215AB) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXSMCG150CARoving Networks / Microchip Technology |
TVS DIODE 150V 243V DO215AB |
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MAPLAD30KP20AE3Roving Networks / Microchip Technology |
TVS DIODE 20V 34V PLAD |
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MAPLAD30KP75ARoving Networks / Microchip Technology |
TVS DIODE 75V 121V PLAD |
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ESD7205WTT1GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 5V 12.5V SC70-3 |
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MXLPLAD7.5KP28CARoving Networks / Microchip Technology |
TVS DIODE |
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JAN1N6116AUSRoving Networks / Microchip Technology |
TVS DIODE 20.6V 37.4V B SQ-MELF |
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MSMLG43ARoving Networks / Microchip Technology |
TVS DIODE 43V 69.4V DO215AB |
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MXLSMCGLCE11ARoving Networks / Microchip Technology |
TVS DIODE 11V 18.2V DO215AB |
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MSMCJ5.0A/TRRoving Networks / Microchip Technology |
TVS |
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MSMBJSAC8.5E3/TRRoving Networks / Microchip Technology |
TVS |
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MAPLAD18KP12AE3Roving Networks / Microchip Technology |
TVS DIODE 12V 19.9V PLAD |
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MSMBG130AE3/TRRoving Networks / Microchip Technology |
TVS |
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MV1N8171Roving Networks / Microchip Technology |
TVS DIODE |
