English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 40.2V |
| 电压 - 击穿（分钟）: | 44.7V |
| 电压 - 钳位（最大值）@ ipp: | 64.8V |
| 电流 - 峰值脉冲 (10/1000µs): | 9.3A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | T-18, Axial |
| 供应商设备包: | T-18 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MASMCG85AE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO215AB |
|
|
1N5660ARoving Networks / Microchip Technology |
TVS DIODE 111V 179V DO13 |
|
|
MP6KE16ARoving Networks / Microchip Technology |
TVS DIODE 13.6V 22.5V T-18 |
|
|
MXPLAD30KP78CARoving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
|
|
MXLPLAD6.5KP20ARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V PLAD |
|
|
MXLP6KE120CAE3Roving Networks / Microchip Technology |
TVS DIODE 102V 165V T-18 |
|
|
MX1.5KE47CAE3Roving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V CASE-1 |
|
|
JTX1N6116AUSSemtech |
T MET BI 500W 27V |
|
|
M1.5KE22ARoving Networks / Microchip Technology |
TVS DIODE 18.8V 30.6V CASE-1 |
|
|
JAN1N6145AUSSemtech |
TVS BI 1500W 12.35V SM |
|
|
MXLPLAD7.5KP17AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MLCE64ARoving Networks / Microchip Technology |
TVS DIODE 64V 103V CASE-1 |
|
|
MXLPLAD6.5KP14AE3Roving Networks / Microchip Technology |
TVS DIODE 14V 23.2V PLAD |
