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| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | 1 |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | 300V |
| 电压 - 击穿（分钟）: | 332V |
| 电压 - 钳位（最大值）@ ipp: | 482V |
| 电流 - 峰值脉冲 (10/1000µs): | 4A |
| 功率-峰值脉冲: | 1500W (1.5kW) |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | DO-201AA, DO-27, Axial |
| 供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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SM15T39CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
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MXSMLJ24A/TRRoving Networks / Microchip Technology |
TVS |
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MXLSMCGLCE8.5ARoving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V DO215AB |
|
|
DM8W15AQ-13Zetex Semiconductors (Diodes Inc.) |
TVS DO-218 |
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MPLAD30KP160AE3/TRRoving Networks / Microchip Technology |
TVS |
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JANTXV1N6167Roving Networks / Microchip Technology |
TVS DIODE |
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MXSMLG130AE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V DO215AB |
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|
MAPLAD30KP150CAE3Roving Networks / Microchip Technology |
TVS DIODE 150V 243V PLAD |
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|
JANTXV1N6134Roving Networks / Microchip Technology |
TVS DIODE 114V 216.62V AXIAL |
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|
M1.5KE51CARoving Networks / Microchip Technology |
TVS DIODE 43.6V 70.1V CASE-1 |
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|
MAPLAD15KP8.0ARoving Networks / Microchip Technology |
TVS DIODE 8V 13.6V PLAD |
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SZESDM3551MXT5GSanyo Semiconductor/ON Semiconductor |
TVS DIODE 5V X3DFN |
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|
MPLAD36KP120CAE3Roving Networks / Microchip Technology |
TVS DIODE 120V 193V PLAD |
