English
简体中文
CAP CER 0.082UF 250V C0G/NP0 RAD
FIXED IND 6.8MH 360MA 2.9 OHM TH
TVS DIODE 7.78V 13.4V T-18
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 7.78V |
| 电压 - 击穿（分钟）: | 8.65V |
| 电压 - 钳位（最大值）@ ipp: | 13.4V |
| 电流 - 峰值脉冲 (10/1000µs): | 45A |
| 功率-峰值脉冲: | 600W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | T-18, Axial |
| 供应商设备包: | T-18 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
DLTS12AMicrosemi |
TVS DIODE 12V 19.1V 16DIP |
|
|
MPLAD18KP24CARoving Networks / Microchip Technology |
TVS DIODE 24V 38.9V PLAD |
|
|
MXLPLAD7.5KP45AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
30KPA66E3/TR13Roving Networks / Microchip Technology |
TVS DIODE 66V P600 |
|
|
MSMLJ100A/TRRoving Networks / Microchip Technology |
TVS |
|
|
MAPLAD36KP26CAE3Roving Networks / Microchip Technology |
TVS DIODE 26V 43V PLAD |
|
|
SMCJ13AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MXPLAD7.5KP15AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
SMPC78ANHM3/IVishay General Semiconductor – Diodes Division |
1.5KW 78V 5% UNIDIR SMPC TVS |
|
|
SMPC40ANHM3/IVishay General Semiconductor – Diodes Division |
1.5KW 40V 5% UNIDIR SMPC TVS |
|
|
MXLPLAD36KP36AE3Roving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
|
|
SMCJ100CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MAPLAD15KP100CARoving Networks / Microchip Technology |
TVS DIODE 100V 162V PLAD |