类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/516 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | - |
双向通道: | 1 |
电压 - 反向间隔(典型值): | 98.8V |
电压 - 击穿(分钟): | 123.5V |
电压 - 钳位(最大值)@ ipp: | 178.8V |
电流 - 峰值脉冲 (10/1000µs): | 2.8A |
功率-峰值脉冲: | 500W |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | B, Axial |
供应商设备包: | Axial |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MSMBJ7.5CAE3/TRRoving Networks / Microchip Technology |
TVS |
|
TPSMB39AHM3_A/HVishay General Semiconductor – Diodes Division |
600W 39V 5% SMB PAR |
|
1N6067Roving Networks / Microchip Technology |
TVS DIODE 121V 223V DO13 |
|
1.5SMC43CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
|
MAPLAD36KP40AE3Roving Networks / Microchip Technology |
TVS DIODE 40V 64.5V PLAD |
|
MX1.5KE300ARoving Networks / Microchip Technology |
TVS DIODE 256V 414V CASE-1 |
|
MXLSMLG48AE3Roving Networks / Microchip Technology |
TVS DIODE 48V 77.4V DO215AB |
|
MXPLAD18KP54ARoving Networks / Microchip Technology |
TVS DIODE 54V 87.1V PLAD |
|
MAPLAD15KP8.5CAE3Roving Networks / Microchip Technology |
TVS DIODE 8.5V 14.4V PLAD |
|
ESD5101AFCT5GSanyo Semiconductor/ON Semiconductor |
DIODE ESD 01005 DSN2 |
|
ICT-18Roving Networks / Microchip Technology |
TVS DIODE 18V 25.2V DO13 |
|
MAPLAD7.5KP20AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
1N6145AUSSemtech |
TVS DIODE 9.9V 18.2V |