类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 28.2V |
电压 - 击穿(分钟): | 31.4V |
电压 - 钳位(最大值)@ ipp: | 45.7V |
电流 - 峰值脉冲 (10/1000µs): | 13.2A |
功率-峰值脉冲: | 600W |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | T-18, Axial |
供应商设备包: | T-18 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MASMCG110AE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AB |
|
MPLAD18KP130CARoving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
MAPLAD7.5KP11AE3Roving Networks / Microchip Technology |
TVS DIODE |
|
MSMLG7.5CA/TRRoving Networks / Microchip Technology |
TVS |
|
MXUPTB48E3Roving Networks / Microchip Technology |
TVS DIODE |
|
MXL1.5KE11AE3Roving Networks / Microchip Technology |
TVS DIODE 9.4V 15.6V CASE-1 |
|
SMCJ40CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
MX1.5KE24AE3Roving Networks / Microchip Technology |
TVS DIODE 20.5V 33.2V CASE-1 |
|
5KP6.0CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 6V 11.4V P600 |
|
JTX1N6162ASemtech |
T MET BI 1500W |
|
MXP6KE12ARoving Networks / Microchip Technology |
TVS DIODE 10.2V 16.7V T-18 |
|
PESD4USB5U-TBRXNexperia |
TVS DIODE XSON10 |
|
MPLAD36KP180CARoving Networks / Microchip Technology |
TVS DIODE 180V 291V PLAD |