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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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15KPA17AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 17V 29.3V P600 |
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MXLPLAD36KP280CARoving Networks / Microchip Technology |
TVS DIODE 280V 451V PLAD |
|
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MASMCGLCE22AE3Roving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO215AB |
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MXLPLAD7.5KP12CARoving Networks / Microchip Technology |
TVS DIODE |
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JANTXV1N5637ARoving Networks / Microchip Technology |
TVS DIODE 12.8V 21.2V DO13 |
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MSMLJ150CA/TRRoving Networks / Microchip Technology |
TVS |
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MPLAD18KP75CAE3Roving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V PLAD |
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MAPLAD18KP18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V PLAD |
|
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MALCE51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V CASE-1 |
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TPSMB24AHM3_A/HVishay General Semiconductor – Diodes Division |
600W 24V 5% SMB PAR |
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MXSMCG110CAE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AB |
|
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30KPA66CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 66V P600 |
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MXPLAD6.5KP15ARoving Networks / Microchip Technology |
TVS DIODE 15V 24.4V PLAD |
