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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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1.5SMC110AHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE 1500W DO-214AB |
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MSMLG60AE3Roving Networks / Microchip Technology |
TVS DIODE 60V 96.8V DO215AB |
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MXLPLAD30KP170CARoving Networks / Microchip Technology |
TVS DIODE 170V 275V PLAD |
|
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MAPLAD30KP43CAE3Roving Networks / Microchip Technology |
TVS DIODE 43V 69.4V PLAD |
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MAPLAD18KP10AE3Roving Networks / Microchip Technology |
TVS DIODE 10V 17V PLAD |
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MSMLJ22CA/TRRoving Networks / Microchip Technology |
TVS |
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MX1.5KE20CAE3Roving Networks / Microchip Technology |
TVS DIODE 17.1V 27.7V CASE-1 |
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MXPLAD18KP9.0CAE3Roving Networks / Microchip Technology |
TVS DIODE 90V 146V PLAD |
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VCAN33A2-03GHE3-08Vishay General Semiconductor – Diodes Division |
ESD PROTECTION DIODE SOT323-HE3 |
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MXLPLAD36KP130CAE3Roving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
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MXSMCGLCE28AE3/TRRoving Networks / Microchip Technology |
HI REL TVS |
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MAPLAD30KP18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 30.8V PLAD |
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MXSMCG85CAE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO215AB |
