English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Avalanche |
| 电压 - 直流反向 (vr) (max): | 1800 V |
| 电流 - 平均整流 (io): | 2.3A |
| 电压 - 正向 (vf) (max) @ if: | 1.34 V @ 7 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 700 µA @ 1800 V |
| 电容@vr, f: | - |
| 安装类型: | Through Hole |
| 包/箱: | Radial |
| 供应商设备包: | - |
| 工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SS1FL3-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1A DO-219AB |
|
MUR120Rochester Electronics |
DIODE GEN PURP 200V 1A AXIAL |
|
BAV302-TRVishay General Semiconductor – Diodes Division |
DIODE GP 150V 250MA MICROMELF |
|
VSS8D5M10HM3/IVishay General Semiconductor – Diodes Division |
5A, 100V, SLIMSMAW TRENCH SKY RE |
|
PMEG6030EP/8XNexperia |
DIODE SCHOT 60V 3A SOD128/CFP5 |
|
UGB8CTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 8A TO263AB |
|
SE10DJHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A TO263AC |
|
SCS310APC9ROHM Semiconductor |
DIODE SC SCHKY 650V 10A TO220ACP |
|
SMBT1580LT1GRochester Electronics |
DIODE STD REC SOT23 |
|
SL22-E3/52TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 2A DO214AA |
|
JANTX1N5614Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
BYV13-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A SOD57 |
|
BYG24J-M3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A |
