类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 800 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 75 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 800 V |
电容@vr, f: | 15pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | SOD-123W |
供应商设备包: | SOD-123FA |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MUR815Rochester Electronics |
DIODE GEN PURP 150V 8A TO220AC |
|
FM302-WRectron USA |
DIODE GEN PURP GLASS 100V 3A SMC |
|
RURP3050Rochester Electronics |
RECTIFIER DIODE |
|
TPAR3J S1GTSC (Taiwan Semiconductor) |
DIODE AVALANCHE 600V 3A TO277A |
|
NHP820LFST1GSanyo Semiconductor/ON Semiconductor |
RECTIFIER 200V 8A |
|
VS-240U60DVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 320A DO205AB |
|
1N5295Solid State Inc. |
FED .82 MA DO35 |
|
1SS400T1Rochester Electronics |
RECTIFIER DIODE, 0.2A, 100V |
|
1N6481HE3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
|
NSB8GTHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
|
SFF1005G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 10A ITO220AB |
|
D4810N28TVFXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 2.8KV 4810A |
|
GP30M-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |