类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Tube |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 20A |
电压 - 正向 (vf) (max) @ if: | 1.07 V @ 20 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 350 µA @ 100 V |
电容@vr, f: | - |
安装类型: | Through Hole |
包/箱: | TO-220-3 |
供应商设备包: | TO-220AB |
工作温度 - 结: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PDR3G-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 400V 3A POWERDI5 |
|
SE30PAG-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO221BC |
|
RB160MM-50TRROHM Semiconductor |
DIODE SCHOTTKY 40V 1A PMDU |
|
FR151GTASMC Diode Solutions |
DIODE GPP 50V 1.5A DO15 |
|
BAS716FNexperia |
DIODE GEN PURP 75V 200MA SOD523 |
|
1N5406RLGRochester Electronics |
RECTIFIER DIODE, 3A, 600V |
|
BYC30X-600P,127WeEn Semiconductors Co., Ltd |
DIODE GEN PURP 600V 30A TO220F |
|
ESH1DHM3_A/HVishay General Semiconductor – Diodes Division |
1A 200V SM ULTRAFAST RECT SMA |
|
VS-SD1100C08LVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1170A B-43 |
|
1N5406T-GComchip Technology |
DIODE GEN PURP 600V 3A DO201AD |
|
MUR4L20 B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 4A DO201AD |
|
BAS7002WH6327Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
GL41KHE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO213AB |