类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 40 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 700 mV @ 2 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 1 mA @ 40 V |
电容@vr, f: | 80pF @ 5V, 1MHz |
安装类型: | Surface Mount |
包/箱: | DO-214AA, SMB |
供应商设备包: | SMB |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CDBER00340Comchip Technology |
DIODE SCHOTTKY 40V 30MA 0503 |
|
GP10J-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
SB340-E3/73Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3A DO201AD |
|
ES3GBSURGE |
3A -400V - SMB (DO-214AA) - RECT |
|
VS-1N1206AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
|
NRVTS10100EMFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 10A 5DFN |
|
RBR3LAM30BTFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
NTE584NTE Electronics, Inc. |
D-SI SCHOTTKY RF SW |
|
BAS16HLPQ-7BZetex Semiconductors (Diodes Inc.) |
FAST SWITCHING DIODE X1-DFN1006- |
|
ES1C-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO214AC |
|
VS-HFA16TB120SLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 16A TO263AB |
|
VS-300U30AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 300A DO205AB |
|
JAN1N6622USRoving Networks / Microchip Technology |
DIODE GEN PURP 660V 2A D5A |