类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
二极管型: | Schottky |
电压 - 直流反向 (vr) (max): | 100 V |
电流 - 平均整流 (io): | 10A |
电压 - 正向 (vf) (max) @ if: | 680 mV @ 10 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | 100 µA @ 100 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | PowerDI™ 5 |
供应商设备包: | PowerDI™ 5 |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CES388,L3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 100MA ESC |
|
1N6480-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
|
RSFBL RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 500MA SUBSMA |
|
SF34GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO201AD |
|
ES3DV M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
|
S1GL R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SUB SMA |
|
BYG20D-E3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A |
|
JANTXV1N5619Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 1A AXIAL |
|
VS-40HFL10S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
|
UPR10E3/TR7Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 2.5A DO216 |
|
SF16G-TPMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 1A DO-41 |
|
GF1M/1754Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO214BA |
|
BYT77-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 3A SOD64 |