English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 600 V |
| 电流 - 平均整流 (io): | 2.4A (DC) |
| 电压 - 正向 (vf) (max) @ if: | 1.05 V @ 4 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 2.2 µs |
| 电流 - 反向泄漏@ vr: | 10 µA @ 400 V |
| 电容@vr, f: | 28pF @ 4V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | TO-277, 3-PowerDFN |
| 供应商设备包: | TO-277A (SMPC) |
| 工作温度 - 结: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AR4PJHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
|
1N6642USRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA D5D |
|
RB521VM-40FHTE-17ROHM Semiconductor |
RB521VM-40FH IS SUPER LOW V |
|
FMY-1106SSanken Electric Co., Ltd. |
DIODE GEN PURP 600V 10A TO220F |
|
ACDBA260LR-HFComchip Technology |
DIODE SCHOTTKY 60V 2A DO214AC |
|
SS1FH6HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO219AB |
|
UGB8JTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
APTDF500U40GRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 500A LP4 |
|
UFS510J/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 5A DO214AB |
|
VS-MBR735-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC |
|
HS1D R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
EGF1BSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 1A SMA |
|
VS-8EWH06FN-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A DPAK |
